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| PTF 10019 70 Watts, 860-960 MHz GOLDMOSTM Field Effect Transistor Description The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * * * * * INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 80 74 Output Power 60 Efficiency 40 66 Output Power (Watts) 50 42 Efficiency (%) 58 A-1 100 2 3 4 19 568 VDD = 28 V 20 34 26 18 10 4.0 955 IDQ = 600 mA f = 960 MHz 0.0 1.0 2.0 3.0 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gpe P-1dB h Y Min 13.0 70 45 -- Typ 14.5 75 50 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10019 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 25 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 3.0 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 215 1.25 -40 to +150 0.8 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain, and Efficiency (at P-1 dB) vs. Frequency Output Power and Efficiency 16 90 Output Power (W) 15 80 Broadband Test Fixture Performance 16 Gain (dB) 14 12 60 50 Efficiency (%) 40 - 30 5 -15 20 -25 10 960 70 Power Gain @ P-1dB Gain 14 8 6 4 900 13 Efficiency (%) 12 800 60 VDD = 28 V, IDQ = 600 mA, POUT = 70 W Return Loss (dB) 915 930 945 850 900 950 50 1000 Frequency (MHz) Frequency (MHz) 2 Return Loss Power Gain (dB) 70 10 Efficiency e Power Gain vs. Output Power 18 90 PTF 10019 Output Power (at P-1dB) vs. Supply Voltage Output Power (Watts) 85 80 75 70 65 60 55 17 16 IDQ = 600 mA IDQ = 300 mA Gain (dB) 15 14 13 12 11 10 0.1 IDQ = 150 mA 1.0 10.0 100.0 f = 960 MHz IDQ = 600 mA 23 25 27 29 31 33 Output Power (Watts) Drain-Source Voltage (Volts) Intermodulation Distortion vs. Output Power -10 200 Capacitance vs. Voltage * VGS = 0 V f = 1 MHz 20 18 16 14 12 10 8 6 4 2 0 40 VDD = 28 V -20 180 IDQ = 600 mA f1 = 959.900 MHz f2 = 960.000 MHz 3rd Order Cds and Cgs (pF) 160 140 120 100 80 60 40 20 0 0 10 20 IMD (dBc) -30 -40 5th 7th Cds Crss 30 -50 -60 0 10 20 30 40 50 60 70 80 Output Power (Watts-PEP) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.04 1.02 0.40 Voltage normalized to 1.0 V Series show current (A) Bias Voltage (V) 1.00 0.98 0.96 0.94 -20 30 Temp. (C) 80 1.32 2.25 3.17 4.09 5.02 130 3 Crss (pF) Cgs PTF 10019 Impedance Data (VDD = 28 V, Pout = 70 W, IDQ = 600 mA) D e Z0 = 10 W Z Source Z Load G S Frequency MHz 840 860 900 920 960 980 R Z Source W jX 0 -0.2 -0.4 -0.4 -0.7 -0.6 R 2.3 2.0 1.8 1.7 1.6 1.6 0.9 1.0 1.2 1.2 1.8 2.2 Z Load W jX 1.7 1.6 1.6 1.6 1.7 1.8 Test Circuit Test Circuit Schematic for f = 960 MHz PTF 10019 Microstrip 50 W 0.125 l 960 GHz 0.186 l 960 GHz 0.200 l 960 GHz 0.060 l 960 GHz C1, C2, C4, C6 36 pF C3 3.6 pF C5 0.01 mF DUT l1, l6 l2 l3 l4 l5 LDMOS Field Effect Transistor Microstrip 50 W Microstrip 10 W Microstrip 7.5 W Microstrip 50 W Chip Cap ATC 100 B Chip Cap ATC 100 A Capacitor Digi-Key P4917-ND C7 C8 L1 R1, R2, R3 R4 Circuit Board Electrolytic Capacitor, Digi-Key P5276 1.7 pF Chip Cap ATC 100 B 4 Turn, #20 AWG, .120"I.D. 220 W, 1/4 W Resistor 10K W, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper 50 mF, 35 V 4 e 10019 PTF 10019 Components Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1997 Ericsson Inc. EUS/KR 1301-PTF 10019 Uen Rev. A 10-22-99 5 e Notes: 6 |
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